Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires

Rashba effect in strained InGaAs/InP quantum wire structures

We investigated the effect of the Rashba spin–orbit coupling in two-dimensional electron gases and quasi one-dimensional wire structures based on a strained InGaAs/InP heterostructure. For the two-dimensional electron gas structure it is demonstrated that the Rashba effect can be controlled by using a gate electrode. By a detailed discussion it is shown that our heterostructure can be employed ...

Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires

Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires.

Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is...

Submilliamp Threshold InGaAs-GaAs Strained Layer Quantum-Well Laser

Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).

Conductance in quantum wires by three quantum dots arrays

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...